Abstract
TaSi2 nanowires have been synthesized by annealing FeSi2 thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The TaSi2 nanowires are formed in three steps; segregation of Si atoms from the FeSi2 underlayer to form Si base, growth of TaSi2 nanodots on Si base, and elongation of TaSi2 nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications. c 2005 American Institute of Physics.