摘要
In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 μm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices. © 2010 American Chemical Society.