摘要
As one of the two-dimensional (2-D) transition metal dichalcogenides, atomically thin molybdenum disulfide (MoS 2 ) has attracted significant attention and research interests for micro and nanoelectronic applications. Significant efforts have been made to develop different approaches in order to obtain atomic layer MoS 2 , such as exfoliation, chemical synthesis, and physical or chemical vapor deposition (CVD) processes. In this paper, we report a hydrogen-free and promoter-free CVD growth to synthesize large-area MoS 2 atomic layers. A variety of techniques including optical microscopy (OM), atomic force microscopy (AFM), photoluminescence (PL) mapping, Raman and x-ray photoelectron spectroscopy (XPS), high resolution electron microscopy (HREM) and scanning transmission electron microscopy (STEM) were applied to characterize the film quality, uniformity and layer numbers. High quality centimeter-sized MoS 2 atomic layers were demonstrated, which form a foundation to develop wafer-sized material platform for device fabrication and production.