Abstract
Needle-like diamond grains encased in nano-graphitic layers are an ideal granular structure of diamond films to achieve high conductivity and superior electron field emission (EFE) properties. This paper describes the plasma post-treatment (ppt) of ultrananocrystalline diamond (UNCD) films at low substrate temperature to achieve such a unique granular structure. The CH4/N2 plasma ppt-processed films exhibit high conductivity of σ=1099S/cm as well as excellent EFE properties with turn-on field of E0=2.48V/μm (Je=1.0mA/cm2 at 6.5V/μm). The ppt of UNCD film is simple and robust process that is especially useful for device applications.