Abstract
The performance of THz photoconductive (PC) emitter antennas fabricated on multienergy arsenic ion implanted GaAs and semi-insulating GaAs was compared. High damage threshold biasing and large saturation optical-pumping power for multi-GaAs:As + based PC antennas were reported. The carrier mobility in the As ion implanted layer of GaAs:As + was found to be about 150 cm 2 /V/s, which was comparable to that of low temperature GaAs.