Abstract
In 0.32 Ga 0.68 P epitaxial layers doped with Te and Zn were grown on (100) GaAs 0.61 P 0.39 epitaxial substrates by liquid-phase epitaxy using a supercooling method. The electrical properties of doped layers were determined by C-V measurements at 300 K. Room-temperature carrier concentrations ranging from 9×10 16 to 2×10 18 cm -3 for n-type and from 3×10 16 to 6×10 18 cm -3 for p-type dopants are obtained reproducibly. The full width at half maximum value of the 300 K photoluminescent spectrum increases with carrier concentration for Te- and Zn-doped layers. The relative intensity of 300-K photoluminescent peak presents the maximum values at 1×10 18 and 6×10 17 cm -3 for electron and hole concentrations, respectively. The 100-K photoluminescent spectra show three distinctive peaks and their relative intensities change with hole concentrations. Finally, the relationship between the acceptor ionization energy and hole concentration is described.