Abstract
The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitting experimental data exhibits the quantum confinement effect, indicating greater suppression of Ioff than that in JL planar TFTs. The measured [InlineEquation not available: see fulltext.] of -1.34 mV/°C in JL GAA nanosheet TFTs has smaller temperature dependence than that of -5.01 mV/°C in JL planar TFTs. © 2014 Cheng et al.; licensee Springer.