摘要
We present a photoemission study of the initial growth stages of amorphous Si on the InP(110) cleaved surface, performed at 120 K and compared with the room-temperature (RT) results. Deposition at low temperature gives a larger valence-band discontinuity with respect to RT and high-temperature (280 °C) growth. This effect is explained by the smaller outdiffusion of In atoms in the silicon overlayer. © 1993 The American Physical Society.