Abstract
GalnAs quantum wire (QWR) heterostructures have been grown by molecular beam epitaxy using the strain-induced lateral-layer ordering (SILO) process. Broad-area Fabry-Perot QWR lasers have been fabricated from this material. The lasing wavelength from the QWR laser shifts at a rate of 0.9 Å/°C between 77 and 300 K compared to 4.6 Å/°C for a quantum well laser control sample. Furthermore, the gain spectra of the QWR laser are derived from the amplified spontaneous emission spectra at 77 and 300 K using the Hakki-Paoli method. The gain peak is also stabilized against temperature changes indicating that temperature stable lasing behavior seen in SILO grown GalnAs QWR Fabry-Perot laser diodes is due to a temperature stable band gap. © 2001 American Institute of Physics.