摘要
We have investigated the temperature, T, dependence of a highly sensitive far-infrared (FIR) photodetector fabricated on a two-dimensional electron gas system in GaAs/AlGaAs heterostructures. The photoinduced resistance change, ΔR <sub>xx</sub> , observed in different integer quantum Hall (QH) regimes shows different T dependences. At high T, ΔR <sub>xx</sub> is limited by the vanishing of rising electronic temperature ΔTe. For T <5 K, ΔR <sub>xx</sub> can either rapidly increase with lower T or slowly diminish, determined by the interplay between the magnetic field dependence of ΔTe and the T dependence of QH states. © 2010 The Japan Society of Applied Physics.