摘要
A novel contact resistive random access memory (CRRAM) device based a temperature sensor is proposed and investigated in this letter. By establishing the relationship between CRRAM's random telegraph noise (RTN) signal and temperature, a new temperature sensing scheme is demonstrated for the first time. With a simple comparator circuit, a digital output temperature sensor is successfully implemented based on the temperature-dependent RTN signal. The new sensing scheme is very suitable to low-power low-speed sensor modules. © 2012 IEEE.