Abstract
Terahertz time-domain spectroscopy has been used to investigate terahertz conductivity and dielectric response of indium nitride (InN) nanorod array and epitaxial film. The complex terahertz conductivity of InN film is well fitted by the Drude model, while the negative imaginary conductivity of the InN nanorods can be described by using the Drude-Smith model. The electron mobility of the InN film is 1217±58 cm2 V s, while that of the InN nanorods is 80±5 cm2 V s. The reduced mobility of carriers for the latter can be attributed to the restricted carrier transport within the nanorods. © 2007 American Institute of Physics.