摘要
We have studied the buried oxide integrity in oxygen plasma‐enhanced low‐temperature wafer bonding. As observed by cross‐sectional scanning electron microscopy, the bonding strength of the oxygen plasma‐treated sample is so large that forced separation for a 600°C bonded wafer takes place at the heterointerface of the thermal oxide and the Si substrate rather than at the oxide‐oxide bonding interface. The plasma‐enhanced bonding shows good structure property with negligible defects as observed by cross‐sectional transmission electron microscopy. From capacitance‐voltage measurement, good electrical property is evidenced by the low oxide‐charge and interface‐trap densities of Formula and Formula , respectively, from capacitance‐voltage measurements. © 2000 The Electrochemical Society. All rights reserved.