摘要
This article proposed a novel design for the monolithic micro-LED array, directly integrated with a sapphire microreflector. Its resolution was 300 dpi. Theoretically, each micro-LED pixel owns an individual sapphire microreflector which can directly concentrate rays from an emitting source. Therefore, this study proposed that the optical crosstalk between neighboring micro-LED pixels could be suppressed and the contrast of the micro-LED array improved; as this would be especially beneficial for display. The simulation results showed that the increased thickness of the sapphire microreflector could further improve the optical performance of the micro-LED array. For the fabrication process, the key technology was an integrated process involving the inductively coupled plasma (ICP) etching technology for sapphire and micro-LED fabrication, which was used to fulfill the proposed and reference micro-LED arrays. The measurement results showed that the sapphire microreflector could effectively concentrate the emitting rays and increase the contrast of the micro-LED array. In addition, it also indicated that the inclination angle of the microreflector could further improve optical performance. Therefore, this approach was verified to be capable of improving the performance of the micro-LED display.