Abstract
A hole concentration as high as 5 × 10 19 cm -3 has been achieved by utilizing phosphorus implantation and subsequent pulsed electron beam annealing. Data from electron paramagnetic resonance reveal that the effects of fast melting and freezing in the PEB annealing process forces almost all the implanted P atoms to occupy the Te lattice sites in the CdTe crystals that contribute conducting carriers. However, the near equilibrium thermal annealing leaves the implanted P atoms that give rise to the EPR signals, and the solid solubility of P in CdTe limits the hole concentration to the level of 5 × 10 17 cm -3 . © 1989.