Abstract
The doping concentration dependence of the zinc acceptor energy level in In 0.49 Ga 0.51 P has been studied and can be expressed as E A =45.75-8.20×10 -6 P 1 /3 meV, where P is the zinc acceptor concentration in cm -3 . The zinc-doped In 0.49 Ga 0.51 P epitaxial layers were grown on 〈100〉 oriented semi-insulating GaAs substrates which are in very good crystallinity with a lattice mismatch of only 0.26%.