Abstract
In 0.53 Ga 0.47 As epitaxial layers doped with Zn and Sn were grown on InP (100) substrates by liquid-phase epitaxy with a 5°C supersaturation temperature. The physical properties of the doped layers have been investigated. The peak energy of (D 0 ,A 0 ) pair band emission in Zn-doped InGaAs layers decreases with a linear slope of 0.7×10 -8 eV cm as the cube root of net hole concentration is increased. In Sn-doped layers, the photoluminescent peak wavelength decreases with increasing electron concentration due to the Burstein-Moss shift and band-tailing effects. The relative peak intensity deteriorates in highly doped layers due to the formation of complex precipitates.