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The effect of tensile strain on optical anisotropy and exciton of m-plane ZnO
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The effect of tensile strain on optical anisotropy and exciton of m-plane ZnO

H.H. Wang, J.S. Tian, C.Y. Chen, H.H. Huang, Y.C. Yeh, P.Y. Deng, L. Chang, Y.H. Chu, Y.R. Wu 和 J.H. He
IEEE Photonics Journal, 卷.7(2), 7064700
04/2015
DOI: https://doi.org/10.1109/JPHOT.2015.2415672

摘要

II-VI semiconductor materials Optical films optical polarization photoluminescence strain Atomic and Molecular Physics and Optics Electrical and Electronic Engineering
The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO 3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112¯0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.

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