The effects of in situ N2 plasma treatment on etch of HfO2 in inductively-coupled Cl2/N2 plasmas

Journal article

Peer reviewed

Chaung Lin, Keh-Chyang Leou, Yeou-Chung Fan, Ting-Chieh Li and Kuei-Hui Chang

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

2007

Abstract

N2 plasma treatment;HfO2;inductively-coupled Cl2/N2 plasmas

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Title: The effects of in situ N2 plasma treatment on etch of HfO2 in inductively-coupled Cl2/N2 plasmas
Creators - without role: Chaung Lin
Keh-Chyang Leou - 國立清華大學原子科學院工程與系統科學系
Yeou-Chung Fan
Ting-Chieh Li
Kuei-Hui Chang
Publication Details: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Identifiers: 9957771013306774
Academic Unit: Department of Engineering and System Science, College of Nuclear Science, National Tsing Hua University
Language: Traditional Chinese
Resource Type: Journal article