摘要
This work investigates the impact of two different TiN capping metal thicknesses on high-k oxygen vacancies in n-MOSFETs. Traditionally, oxygen vacancies in HfO2 can be repaired by nitrogen in the TiN gate, and these repairs become more pronounced as thickness increases. Nevertheless, in this study, where the thicknesses of the TiN capping metal was less than 30 &null, more oxygen vacancies were found in thick-capped devices than in the thin-capped devices because the repair of oxygen vacancies is dominated by the diffusion of oxygen rather than by the diffusion of nitrogen.