摘要
In this paper, GaSb nanostructures prepared under different Sb/background As ratios are investigated. With decreasing Sb/background As ratios, the morphologies of GaSb nanostructure changing from quantum dots (QDs) to quantum rings (QRs) are observed. The higher optical recombination probabilities of GaSb QRs are attributed to enhanced electron-hole wave function overlapping and more surrounding electrons around the GaSb QR core shell. With well-control Sb/background As ratios, the high-temperature operation GaSb quantum-dot infrared photodetector (QDIP) with simple stacked structure has been demonstrated. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.