Abstract
The annealing sequence influences on p + -n junction observed by using scanning capacitance microscopy was reported. The stability and mechanism of the electrical junctions formed by spike annealing were also discussed. It was observed that the post spike annealing degraded the electrical activation of boron atoms, leading to junction narrowing without significant boron diffusion. The analysis shows that the furnace annealing followed by spike annealing resulted in broadening with a more concentrated boron profile.