摘要
A transmission electron microscopy study of oxidation behavior of MoSi 2 on (111)Si has been carried out. For a 180 nm thick MoSi 2 layer on (111)Si, a high density of defects was found to form in silicon in samples oxidized in wet O 2 . The defects were identified to be of interstitial type with 1/2〈011〉 Burgers vectors. However, no defects were found in silicon after dry oxidation. Metal oxide mixed with SiO 2 was found to form at 700°C in samples oxidized in wet O 2 . The parabolic activation energies were found to be 1.4 (±0.15) eV and 1.2 (±0.2) eV for dry and wet oxidation, respectively.