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The straining effect on tunneling resistance of Co/AlOx/Co/IrMn junctions
Journal article   Peer reviewed

The straining effect on tunneling resistance of Co/AlOx/Co/IrMn junctions

S. U. Jen, Yuan-Tsung Chen, Jenn-Ming Wu, Wen-Chih Chen, Wei-Chun Cheng and Y. D. Yao
Applied Physics Letters, Vol.89(22), 222510
2006

Abstract

The authors have fabricated a series of CoAl Ox (d0) CoIrMn magnetic tunnel junctions (MTJs), with d0 =12-30 Å. They can be used as ultrasensitive strain gauges. From the resistance (R) versus strain (Δε) curve, the authors find that the maximum value of the gauge factor (γmax) is as large as 5000-20000 in the low-strain (∫Δε∫ ≤25× 10-6) range. Furthermore, the response is linear. Two mechanisms are proposed to explain the piezoresistance behavior of these MTJs: one is due to the tunneling magnetoresistance effect (the magnetic origin) and the other due to the ordinary tunneling effect (the nonmagnetic origin). © 2006 American Institute of Physics.

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