Abstract
The use of simpler compositions for phase-change memory has been a popular goal. This study explores phase-change, electrical conduction and thermal stability of Ga <sub>16</sub> Sb <sub>84</sub> film to meet this purpose. Amorphous Ga <sub>16</sub> Sb <sub>84</sub> film shows a crystallization temperature of 227 °C and a temperature for 10 year data retention of 148 °C. The density of the film increases 5% upon crystallization. A steep resistance drop during crystallization arises mainly from the sharp increase in carrier concentration with p-type conduction. Ga <sub>16</sub> Sb <sub>84</sub> memory cells demonstrate set-reset switching at a pulse width of 10 ns and have a durability of >10 <sup>5</sup> cycles. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.