摘要
We have experimentally demonstrated thermal evaporated group IV Ge 1-x Sn x -on-Si terahertz (THz) photoconductive antennas (PCA) pumped by an Er-doped femtosecond laser for broadband THz generation. The Ge 1-x Sn x THz PCAs, free from material epitaxial growth methods, can offer comparable material properties in photocarrier generation, transportation, recombination, and the collection as group III-V THz PCAs. At the optical pumping power of 90 mW and a bias voltage of 40V, the Ge 1-x Sn x THz PCAs have achieved a broadband spectrum over 1.5 THz with a 40 dB signal-to-noise ratio (SNR). This CMOS-compatible group IV THz source can be monolithically integrated on the Si photonic platform, paving the way toward THz system-on-chip (SoC) for many on-site applications in the non-destructive evaluation, biomedical imaging, and industrial inspections.