Abstract
With the Si substrate, a process to fabricate Ge metal-oxide-semiconductor (MOS) capacitors with thermally grown Si O2 as the gate dielectric has been presented. The good crystallinity of the epitaxial Ge, the thermal oxide with tiny Ge content, and the smooth interface between oxide and Ge layer demonstrate the eligibility for device operation. From the electrical characterization of the MOS capacitors, enhanced dielectric constant of the gate oxide without deteriorating the leakage current and hysteresis can be achieved by proper N H3 nitridation and subsequent N2 O treatment which shows the high potential to be employed in the fabrication of high performance Ge metal-oxide-semiconductor field-effect transist. © 2007 American Institute of Physics.