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Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopy
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Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopy

C.-L. Wu, J.-L. Hsieh, H.-D. Hsueh and S. Gwo
Physical Review B - Condensed Matter and Materials Physics, Vol.65(4), pp.453091-453096
15/01/2002

Abstract

microscopy;spectroscopy Condensed Matter Physics
By-using scanning tunneling microscopy and spectroscopy (STM and STS), the initial stages of NH <sub>3</sub> exposure on Si(111)-(7×7) at different substrate temperatures and dosages have been studied. At room and very high (∼1050 °C) temperatures, the 7×7 surface structure remains and the nitrided sites appear darker, randomly distributing on the surface. Moreover, we find a constant ratio (∼3.46-3.83) of reacted center adatoms to reacted comer adatoms on the partially nitrided surfaces. At intermediately temperatures (∼900 °C), the majority (>90%) of the reacted surface forms the well-ordered silicon nitride 8×8 reconstruction. In this regime, hexagonal- and triangular-shaped nitride islands can be observed on the 8×8 and 7×7 surfaces, respectively. We have also used STS to investigate the changes of local density of states on the nitrogen-reacted 7×7 surfaces prepared by different conditions.
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