Abstract
High-quality InAs 0.86 Sb 0.05 P 0.09 layers having a lattice near-match with the InAs substrate were grown by liquid-phase epitaxy (LPE) employing a supercooling technique, and the p-n junction diodes were fabricated using Zn-diffused techniques. In this work, we investigated the current-voltage (I-V) relationship with temperature from 30°C to 160°C. The dark current of the diode at 30°C had values of 31.8 μA (0.4 A/cm 2 ) at -0.25V and μA (1.8 A/cm 2 ) at -2V. The dark current in the InAs 0.86 Sb 0.05 P 0.09 diode in the temperature range of 30 to 80°C varies as exp (-E g /nkT) with n = 1.7-1.8, however when the temperature exceeds 100°C, the ideality factor n decreases to 1.1 and 1.2 at -0.25 and -2 V, respectively.