摘要
The roughness of a high-indexed semiconductor surface, Si(331), was studied in a synchrotron X-ray scattering experiment. Below the transition temperature, the surface is macroscopically flat with mean-squared roughness close to that of an ideally terminated (331) facet. The height fluctuations of the surface above the transition temperature diverge logarithmically. The equilibrium crystal shape near the 〈331〉 direction is composed of the (331) facet and round regions connected by a sharp corner whose angle vanishes at the transition temperature. © 1995.