摘要
A back-end-of-line compatible 400 &null thermally robust perpendicular spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) memory cell with a tunnel magnetoresistance ratio of 130&null is demonstrated. It features an energy-efficient spin-transfer-torque-assisted field-free spin-orbit torque (SOT) switching and a novel interface-enhanced synthetic antiferromagnet (SAF). The optimal SAF with a Ru (9 &null) spacer sandwiched by Co/Pt multilayers has a high SAF coupling field of 2.8 kOe. The parallel magnetic coupling between the CoFeB-based reference layer and the bottom Co/Pt multilayer is enhanced by a magnet-coupling face-centered cubic textured Co/Pt (5 &null) multilayer buffer. The thermally induced Pt-Fe interdiffusion is effectively reduced by the W (3 &null) trilayers of texture-decoupling diffusion multibarrier. The Ta/&null -W and TaN/&null -W composite SOT channels are thick enough to be the etching stop and sustain 400 &null annealing without transforming to &null -W. Using the harmonic Hall voltage measurement, the Ta/W and TaN/W channels exhibit the large effective spin Hall angle of approximately -0.21 and -0.27, respectively. Scaling magnetic tunnel junction (MTJ) down to 30 nm size can reduce the switching time due to single-domain switching based on the micromagnetic simulation. The damping constant of ~0.018 is obtained by the ferromagnetic resonance measurement. A bigger damping constant reduces the switching time as predicted by the calibrated simulation.