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Thermally assisted writing for perpendicular MRAM
Journal article   Peer reviewed

Thermally assisted writing for perpendicular MRAM

Zhi-Hao Wu, Chih-Huang Lai, Sheng-Huang Huang and Wei-Chi Lin
Journal of Magnetism and Magnetic Materials, Vol.304(1), pp.93-96
09/2006

Abstract

GMR Perpendicular MRAM TbFeCo Thermally assisted writing
Spin valves composed of TbCo/CoFe/Cu/CoFe/TbFeCo were fabricated with perpendicular magnetization and GMR ratios of 4.5%. The (TbCo/CoFe) layers and (CoFe/TbFeCo) layers are referred to the free and the pinned layers, respectively. The compositions of two layers were chosen to have a lower Curie temperature (130 °C) but higher coercivity (13.2 kOe) of the free layer at room temperature than those of the pinned layer; therefore, the free layer is quite stable at room temperature but its magnetization can be easily switched at a relatively low temperature. Spin valves were patterned into 100-μm-wide cells and their coercivity was reduced with increasing writing current due to the temperature rise by current-heating. When the current density of the writing current was increased to 2.1×10 6 A/cm 2 , the required switching field for the free layer was only 10 Oe. © 2006 Elsevier B.V. All rights reserved.

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