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Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field
Journal article   Peer reviewed

Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field

M. A. Brummell, T. H H Vuong, R. J. Nicholas, J. C. Portal, M. Razeghi, KEH-YUNG CHENG and A. Y. Cho
Solid State Communications, Vol.57(6), pp.377-380
1986

Abstract

This work reports measurements of the diagonal thermopower in several heterojunctions based on Ga .47 In .53 As, in high magnetic fields and as a function of temperature. Structures have been studied in which only one or two electric subbands are populated, and in both cases the thermopower oscillations are in phase with the Shubnikov-de Haas oscillations in the resistivity, in accordance with theory. The absolute magnitude of the thermopower is found to be smaller than predicted by theory, and is also highly temperature dependent. © 1986.

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