Abstract
Microcrystalline silicon films were deposited by diluted-hydrogen method and hydrogen-atom-treatment method at 250 °C in a plasma enhanced chemical vapor deposition system and they were characterized by nuclear magnetic resonance, Raman spectroscopy, and optical bandgap measurements. One-mask a-Si:H thin film transis- tors (TFT’s) were fabricated with those microcrystalline materials as the channel layer. The highest electron mobilities of the TFT’s fabricated by diluted-hydrogen method and hydrogen-atom-treatment method were 1.23 and 1.04 cm 2 /V-s, respectively without any thermal treatment steps. © 1994 Japanese Journal of Applied Physics. All rights reserved.