Abstract
A lithium niobate (LiNbO 3 ) hybrid wafer was developed by a combination of wafer bonding and chemical mechanical polishing. In this study, various plasma ambients were applied to activate the surface of LiNbO 3 and Si substrate to bond the wafers at room temperature. After the surface activated bonding process, the LiNbO 3 substrate was lapped by chemical mechanical polishing. The thickness of the 10cm diameter LiNbO 3 substrate can be decreased from 400 to 10μm without generating serious cracks. Under the optimum lapping parameters, a 1.5 nm surface roughness of the LiNbO 3 film can be obtained. © 2006 The Japan Society of Applied Physics.