- Title
- Tightly stacked 3D diamond-shaped Ge nanowire gate-all-around FETs with superior nFET and pFET performance
- Creators - without role
- 永俊 吳
- Publication Details
- IEEE Electron Device Letters
- Identifiers
- 9957767587306774
- Academic Unit
- Institute of Nuclear Engineering and Science, College of Nuclear Science, National Tsing Hua University
- Language
- English
- Resource Type
- Journal article
Journal article
Tightly stacked 3D diamond-shaped Ge nanowire gate-all-around FETs with superior nFET and pFET performance
IEEE Electron Device Letters
2021
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