摘要
This study reports the synthesis and characterization of non-stoichiometric nanocrystalline Tin-Manganese-Nickel (Sn-Mn-Ni) oxide thin films prepared by thermal evaporation for photosensor applications. The photoconductive characteristics were investigated by fabricating a sandwich-structure device of p + -Si-substrate/Sn-Mn-Ni-oxide-thin-film/indium-tin-oxide (ITO). Results show that Sn 37 Mn 10 Ni 53 O x thin films exhibit an absorption coefficient of 1.15 × 10 6 cm −1 in visible light spectrum. In additions, the device characteristics including a high responsivity (R res ) of 11.5 A/W, and the fast photo-response with a rise time (t r ) of 41.2 ms and a fall time (t f ) of 41.6 ms measured at 1.0 V bias and 460 nm wavelength were obtained. Hence, the Sn 37 Mn 10 Ni 53 O x thin film is favorable for potential photosensor applications in visible light spectrum.