摘要
In this letter, a new ultrahigh-density memory constructed with a contact resistive random access memory (RRAM) is proposed. This slot contact RRAM (SCRRAM) with transition metal oxide from contact liner layers has been successfully demonstrated by a standard 16-nm FinFET process without extra mask or processing step. The new FinFET RRAM features low-power forming and reset operation, stable Low Resistance State (LRS)/High Resistance State (HRS), and compact cell size. As a logic nonvolatile memory (NVM) solution, SCRRAM exhibits high endurance, stable data retention, read and program disturb immunity, which further support this new 1T1R cell as one of the promising embedded NVM solutions in FinFET CMOS generations.