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Topological Phase Transition in Two-Dimensional Magnetic Material CrI3 Bilayer Intercalated with Mo
期刊文章

Topological Phase Transition in Two-Dimensional Magnetic Material CrI3 Bilayer Intercalated with Mo

C.-E. Yin, A. Huang 和 H.-T. Jeng
Materials, 卷.18(20)
2025
Web of Science ID: WOS:001602020500001

摘要

2D topological material first-principle calculation magnetism quantum anomalous Hall effect topological phase transitions Chromium compounds Crystal symmetry Iodine compounds Magnetic materials Magnetization reversal Phase transitions Quantum Hall effect Spin Hall effect Topology Anomalous hall effects Bi-layer First principle calculations Magnetocrystalline anisotropy energies Quantum anomalous hall effect Topological materials Topological phase Topological phase transition Two-dimensional Two-dimensional topological material Energy gap Magnetocrystalline anisotropy
Motivated by the seminal discoveries in graphene, the exploration of novel physical phenomena in alternative two-dimensional (2D) materials has attracted tremendous attention. In this work, through theoretical investigation using first-principles calculations, we reveal that Mo-intercalated (Formula presented.) bilayer exhibits ferromagnetic semiconductor behavior with a small easy-plane magnetocrystalline anisotropy energy (MAE) of 0.618 meV/Cr(Mo) between (100) and (001) magnetizations. The spin–orbit coupling (SOC) opens a narrow band gap at the Fermi level for both magnetization orientations with nonzero Chern number for realizing the quantum anomalous Hall effect (QAHE) in the former and with trivial topology in the latter. The small MAE implies the efficient experimental manipulation of magnetization between distinct topologies through an external magnetic field. Our findings provide compelling evidence that the QAHE in this system originates from the quantum spin Hall effect (QSHE), driven by intrinsic magnetism under broken time-reversal symmetry. These unique properties position Mo-intercalated (Formula presented.) as a promising candidate for tunable spintronic applications. © 2025 by the authors.

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-105020018482&doi=10.3390%2fma18204751&partnerID=40&md5=bee39aa797d6eb98b1c3089316deab8e檢視
url
https://doi.org/10.3390/ma18204751檢視
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