摘要
A flexible ITO/ZnO/TiO x /ITO memristor has been confirmed to be a suitable candidate for nociceptors by demonstrating all of the typical nociceptive characteristics. The annealing effect on the memristor synapse is explored using different annealing time variants of the invisible (above 90% transparency in the visible region) device. The 10 min annealed device is found to be a suitable one for its bipolar nonvolatile gradual switching with over 3000 cycles of endurance and >104 s of retention. Device-to-device uniformity and reproducibility have been achieved with a narrow distribution of set, reset, and forming voltages. Synaptic behaviors like long-term potentiation and depression for 800 cycles with nearly linear potentiation-depression nonlinearity (N p/N d = 3/0.3), as well as short-term plasticity, make it capable of neuromorphic computing applications.