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Transient dual-energy lasing in a semiconductor microcavity
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Transient dual-energy lasing in a semiconductor microcavity

Feng-Kuo Hsu, Wei Xie, Yi-Shan Lee, Sheng-Di LinChih Wei Lai
Scientific Reports, 卷.5, 15347
10/2015

摘要

Multidisciplinary
We demonstrate sequential lasing at two well-separated energies in a highly photoexcited planar microcavity at room temperature. Two spatially overlapped lasing states with distinct polarization properties appear at energies more than 5 meV apart. Under a circularly polarized nonresonant 2 ps pulse excitation, a sub-10-ps transient circularly polarized high-energy (HE) state emerges within 10 ps after the pulse excitation. This HE state is followed by a pulsed state that lasts for 20-50 ps at a low energy (LE) state. The HE state is highly circularly polarized as a result of a spin-preserving stimulated process, while the LE state shows a significantly reduced circular polarization because of a diminishing spin imbalance.

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https://doi.org/10.1038/srep15347檢視
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