摘要
Transmission electron microscopy has been applied to study molybdenum thin films on silicon. Polycrystalline molybdenum films, 500 Å in thickness and 500-1500 Å in grain size, were chemical vapor deposited on (001) oriented, n-type silicon substrate heated to 650-700°C in hydrogen ambient. The samples were then implanted with 150 keV Ar + to fluences 3×10 15 -1×10 16 /cm 3 with the dose rate about 6×10 12 /cm 2 ·s. Hexagonal MoSi 2 , tetragonal MoSi 2 and hexagonal Mo 5 Si 3 were found to form mainly along grain boundaries. Silicide formation along grain boundaries was also found for in-situ annealing of the thin foil at 700°C for 2 h in the electron microscope. The observations provide direct evidence of the important role of grain boundary diffusion in the formation of silicides. © 1982.