摘要
Cross-section transmission electron microscopy has been applied to study the growth kinetics of oxide of WSi 2 on (001)Si and polycrystalline silicon (poly Si) in the dry oxidation process. The linear activation energy and the parabolic activation energy of WSi 2 on (001)Si were found to be 0.8±0.2 and 1.0±0.2 eV for samples dry oxidized at 800-890°C for 10-60 min, respectively. On the other hand, the linear activation energy and parabolic activation energy of WSi 2 on polycrystalline silicon for samples dry oxidized at 800-890°C for 10-60 min were 1.0±0.2 and 1.8±0.2 eV. The linear activation energy is attributed to the diffusion of Si atoms from the substrate to the reaction interface. The different parabolic activation energies of 1.0 and 1.8 eV for WSi 2 on (001)Si and poly Si, respectively, indicate significant difference in diffusion of O 2 through grown SiO 2 . It is conceivable that stress generated during oxidation and the amount of fluorine atoms, introduced during the low pressure chemical vapor deposition process, present in the silicide layer and grown oxide, can influence the oxide quality and oxidation kinetics. © 1999 American Institute of Physics.