Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor

J.C. Chen; Ming-Yang Li; T. Ueda; S. Komiyama

doi:10.1063/1.3155205

Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor

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Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor

J.C. Chen, Ming-Yang Li, T. Ueda 和 S. Komiyama

Applied Physics Letters, 卷.94(23), 232109

2009

DOI: https://doi.org/10.1063/1.3155205

摘要

Physics and Astronomy (miscellaneous)

Coulomb blockade oscillations in a semiconductor quantum dot (QD) with two confined Landau levels are investigated by probing a current through a single-electron transistor (SET) fabricated directly on top of the QD. The intradot tunneling events between the compressible regions in the dot are mapped out by measuring SET currents. Our results demonstrate that a SET can be an excellent electrometer that is extremely responsive to the local individual electron tunneling events in a closed electronic system. © 2009 American Institute of Physics.

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題名: Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor
翻譯題名: Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor
創作者：: J.C. Chen (作者) - National Tsing Hua University
Ming-Yang Li (作者) - Department of the Physics , National Tsing-Hua University
T. Ueda (作者) - The University of Tokyo
S. Komiyama (作者) - The University of Tokyo
學術資源類型: 期刊文章
出版日期: 2009
出版資訊: Applied Physics Letters, 卷.94(23), 232109
語言: 英語

Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor

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