摘要
We use soft x‐ray photoemission spectroscopy to study the Ga/GaAs and Mn/GaAs interfaces formed at room temperature (RT) and at low temperature (LT=80−100 K). The LT Ga/GaAs interface exhibits the strongly inhibited clustering observed at other nonreactive metal/GaAs interfaces. The Mn–GaAs reaction is slowed somewhat. At both interfaces, the effect of temperature on E F movement is in accord with the trends previously set: initial band bending on n‐GaAs is slowed at LT, whereas band bending on p‐GaAs is not affected significantly. For both Ga and Mn/GaAs, E F movement at low coverages is consistent with the explanation proposed for the s p and noble metals: introduction of donor states from, e.g., the specific adsorbate levels. Studies of the noble metal interfaces with GaAs have showed that the establishment of the final E F position is related to the appearance of metallicity at the interface;Mn/GaAs provides direct evidence for that interpretation.