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Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers
Journal article   Peer reviewed

Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers

Chien-Yuan Chang, Michael J. Wishon, Daeyoung Choi, Junliang Dong, Kamel Merghem, Abderrahim Ramdane, Francois Lelarge, Anthony Martinez, Alexandre Locquet and D.S. Citrin
IEEE Journal of Quantum Electronics, Vol.53(3), 7879278
06/2017

Abstract

microwave photonics microwave source nonlinear optics Optoelectronic oscillator semiconductor lasers dynamics Atomic and Molecular Physics and Optics Condensed Matter Physics Electrical and Electronic Engineering
Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire $X$ -band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage V(t) at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-to-electrical conversion. We achieve a timing jitter of 10 ps and a quality factor of 2× 10 5 across the entire X -band, that ranges from 6.79 to 11.48 GHz. Tuning is achieved by varying the injection current J.

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