摘要
Severe Ga accumulation at the back contact is regarded as one of the major limiting factors for high efficiency Cu(In,Ga)Se 2 (CIGSe) solar cells fabricated by the sequential process. The Ga deficiency near the front surface of absorber leads to the reduction of open-circuit voltage; however, controlling the Ga grading is quite challenging during the selenization process. Herein, the tuning of Ga profile is demonstrated by forming the ordered vacancy compound (OVC) phase at the beginning of selenization process under high Se partial pressure (P Se ) with the precursor composed of a relatively high In content. The OVC phase formed with a columnar structure promotes Ga diffusion through Cu vacancies, resulting in Ga increase at the front side of CIGSe. However, high P Se also increases the thickness of MoSe 2 , significantly raising the series resistance. Thereby, a 5 nm TiN layer is deposited on top of Mo to suppress the formation of MoSe 2 . In addition, the extra Na-contained precursor is added to increase the carrier concentration because the TiN layer also blocks the Na outdiffusion from the substrate. By controlling P Se , interlayer TiN thickness, and carrier concentration, a 16.04% record high efficiency of CIGSe solar cells (sulfur-free) via elemental Se source is achieved.