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Tuning the onset pressure of pressure-induced phase transition in indium phosphide by extrinsic doping
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Tuning the onset pressure of pressure-induced phase transition in indium phosphide by extrinsic doping

Chih-Ming Lin, Sin-Cheng Lin, Yu-Chin Tseng, Tony Huang, Huan-Hsuan Kung, Yu-Chun Chuang, Yen-Fa Liao, Bi-Ru Wu, Sheng-Rui JianJenh-Yih Juang
Journal of Physics and Chemistry of Solids, 卷.161, 110487
02/2022

摘要

Angle-dispersive X-ray diffraction Anharmonic lattice modes III-V Semiconductors Pressure effects Structural phase transformations Chemistry (all) Materials Science (all) Condensed Matter Physics
In-situ angle-dispersive X-ray diffraction (ADXRD) and Raman scattering were carried out to delineate the phase transitions under pressure in p-type zinc-doped indium phosphide (InP:Zn) at ambient temperature. The ADXRD measurements with pressure up to 17.3(2) GPa reveal that InP:Zn transforms from zinc-blende (ZB) to rock-salt (RS) structure in a pressure range of 8.1(2) - 8.6(1) GPa. The Raman scattering measurements indicate that the phase transition proceeds continuously over a wide range of pressure and reaches completion at the highest pressure applied (14.5(2) GPa) with significant metallization, as suggested by the disappearance of the transverse optical (TO) and longitudinal optical (LO) modes. In contrast, originally absent at ambient pressure, additional Raman shift of Zn local vibrational modes (LVMs), appeared at 276 cm-1 and 420.7(1) cm-1 within the pressure range of 2.2(1) up to 10.1(2) GPa, which can be attributed to Zn3P2 and VPZnInVP LO modes, respectively. The zero-pressure isothermal bulk moduli and its first order pressure derivatives for the zinc-blende InP:Zn are 79.44(2) GPa and 3.92(1), respectively. A total enthalpy change of about 45.45 KJ•mole-1 was derived for the ZB to RS structure transformation occurring at the pressure of 8.6(1) GPa. The present results suggest that diffusion of Zn in InP:Zn may have been governed by the modified substitution and interstitial (S–I) mechanism. Moreover, comparisons on the pressure-dependent behaviors in InP:Zn, InP:S, and InP:Fe extrinsically doped systems revealed that the exact type of the defects introduced into the lattice upon doping may have played crucial roles in the pressure-induced phase transitions.

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