摘要
A new technique for speckle-free, fine-line high-speed lithography using high-power pulsed excimer lasers is described and demonstrated. Use of stimulated Raman shifting is proposed for obtaining the most desirable set of spectral lines for any resist. This permits the optimization of the exposure wavelengths for a given resist. Excellent quality images are obtained in 1- mu m-thick diazo-type photoresists by means of contact printing with a XeCl laser at 308 nm and a KrF laser at 248 nm. These images are comparable to state-of-the-art contact lithography obtained with conventional lamps, but the excimer laser technique is approximately two orders of magnitude faster.