摘要
The increase in computational demand for applications such as artificial intelligence has now outpaced Moore's Law. Ultra-low voltage CMOS operation is urgently needed to address the everlasting energy consumption growth. In this review article, we introduce steep sub-threshold swing devices such as the tunneling FET and the negative-capacitance FET (NCFET), which allow the use of a very low supply voltage. Ferroelectric materials not only enable NCFET but can also be used for memory at cryogenic temperatures. In addition, for high-performance computing in particular, operating CMOS devices at ultra-low (cryogenic) temperatures has been shown to be an energy-efficient solution despite cooling power/facility requirements. We will review the physics and modeling of cryogenic CMOS technology for the incumbent planar UTB-SOI and FinFET devices, focusing on the limits of sub-threshold swing at very low temperature. Finally, we will briefly touch upon the role of cryogenic CMOS in quantum computation.